The objective of this work is the Hot Filament Chemical Vapor Deposition (HFCVD) of diamond films on stainless steel substrates using a new technique for intermediate barrier forming, made by laser cladding process. In this technique, a powder layer is irradiated by a laser beam to melt the powder layer and the substrate surface layer to create the interlayer. The control of the laser beam parameters allows creating homogeneous coating layers, in rather large area in few seconds. In this work, the silicon carbide powder (SiC) was used to create an intermediate layer. Before the diamond growth, the samples were subjected to the seeding process with diamond powder. The diamond deposition was performed using Hot-Filament CVD reactor and the characterizations were Scanning Electron Microscopy, X-ray diffraction, Raman Scattering Spectroscopy and Scratch Test.

In this work, an active screen plasma discharge system based technology was incorporated in a PECVD reactor for DLC films growth, making it a new development in DLC films deposition. In this case, the active screen system is used to seek better electrons confinement, which might result in high ions density due to the collisions number increase, leading to a possible increase in ionization. DLC films were grown on steel substrates, using two variations of this system. In order to enhance adhesion between coating and substrate, a silicon interlayer was deposited, using different bias voltages. Morphological and structural characterization was performed by scanning electron microscopy, optical profilometry and Raman scattering spectroscopy. Tribological tests were performed by nanohardness, scratch and wear tests. Results showed that the plasma confinement promoted good films adhesion, which may be related to a high sub-implantation. This might be a consequence of the pressure decrease, as well as, to the ions energy distribution narrowing.

AbstractThis paper shows successful hindering of the negative effects of the cobalt binder in the process of coating WC-Co cutting tools with CVD diamond films. The strategy was creating a boron-rich layer on the surface of the WC-Co substrates as an interlayer to block Co migration. The traditional boriding technique was improved by preheating the salt powders and controlling the brittle region thickness in the substrate surface. These procedures produce a tougher surface for diamond growth. Adding CF4 to the gas mixture also enhanced diamond adhesion to the surface. The adhesion of diamond films to WC-Co substrates was evaluated by indentation tests. Samples were characterized by Scanning Electron Microscopy (SEM), Energy Dispersive X-ray (EDX), X-ray Diffraction (XRD) and Raman Scattering Spectroscopy (RSS).

Nanobiomaterials based on superhydrophilic vertically-aligned multi-walled carbon nanotubes (VAMWCNT-O2) are promising for their properties and bone tissue biocompatibility. VAMWCNT-O2 films with nanohydroxyapatite (nHAp) aim to improve mechanical properties and biocompatibility of this new nanocomposite due to its resemblance to bone matrix structure. This study aimed to produce in vitro biomineralized nHAp/VAMWCNT-O2 nanocomposites using simulated body fluid (SBF) with two different pHs (6.10 and 7.40) during 7 days to obtain a new surface design with higher crystalinity and better morphology of nHAp/VAMWCANT-O2 nanocomposites. The objective is to obtain biomineralized nanobiomaterials to enable its applicability as "scaffold" to cellular support and consequent bone tissue formation, accelerating the osseointegration. Layer densification has been achieved due to polycrystalline nanoapatites deposition on surface and between the biomineralized nHAp/VAMWCNT-O2 nanocomposites, without any heat treatment. Therefore, through its characteristics and properties these nanocomposite applications can be considered extremely viable for acceleration of in vivo regenerative processes.

Realizaram-se crescimentos de filmes de diamante por deposição química de vapor (CVD, do inglês Chemical Vapor Deposition) em substratos de silício (100), de grande área (80 cm²), em um reator de filamento quente (HFCVD), com taxas de crescimento superiores a 1,5 µm/h. Foi realizado o crescimento das amostras com diferentes fluxos gasosos e diferentes porcentagens de metano (CH4) em hidrogênio (H2). As amostras foram caracterizadas por microscopia óptica, eletrônica de varredura e por espectroscopia de espalhamento Raman. Tais análises acusaram a presença de diamante de alta pureza em todas as amostras.

Diamond films were grown through Chemical Vapor Deposition (CVD) in silicon substrates (100) of large area (80 cm²), in a hot filament chemical vapor deposition (HFCVD), with growth rates over 1,5 µm/h. The growth of samples was made with different gaseous fluxes and different methane percentages (CH4) in hydrogen (H2). The samples were analyzed through optical microscopy, Scanning Electron Microscopy and Raman spectroscopy scattering. Such analyzes showed the presence of a high purity diamond in all samples.

O preparo dos substratos, para o crescimento de filmes de diamante CVD, é de fundamental importância por diversos fatores. Um novo método de preparação dos substratos de molibdênio, o jateamento por óxido de alumínio, é apresentado e comparado com os métodos tradicionais de preparo. As amostras de diamante CVD obtidas foram analisadas por espectroscopia de espalhamento RAMAN e por microscopia eletrônica de varredura (MEV). Obtiveram-se filmes de diamante CVD de boa qualidade e uniformidade e o novo processo proposto de tratamento do substrato de molibdênio permitiu maior taxa de crescimento que os métodos tradicionais.

The substrate preparation for CVD diamond growth is of basic importance due to several reasons. A new molybdenum substrate preparation method, the aluminum oxide abrasion jetting, is introduced and compared with the traditional ones. Raman Scattering Spectroscopy (RSS) and Scanning Electron Microscopy (SEM) characterize CVD diamond films. CVD diamond films of good quality and uniformity were obtained. The substrate preparation by aluminum oxide blasting allowed for a higher nucleation rate.

Filmes de nitreto de carbono, preparados por deposição assistida por feixe de íons, foram estudados pela espectroscopia de Raman e infravermelho, em função de energia de íons (200, 400, e 600 eV) e razão de chegada de íon a átomo R(I/A) de 0,9 a 2,5. A razão de composição N/C no filme, determinada por análise de detecção de recuo elástico, foi encontrada proporcional a R(I/A); porém, a formação de filme é possível somente se R(I/A) for menor do que um valor crítico da eficiência de "sputtering" químico. Esse valor encontrado foi de 0,21. O valor máximo de N/C obtido foi de 0,9 (47% atômica de nitrogênio) para o filme depositado com 400 eV. Para entender o efeito de incorporação de nitrogênio na estrutura dos filmes, os parâmetros foram determinados pela análise dos espectros Raman e encontrados fortes dependências da quantidade de nitrogênio nos filmes; os comportamentos da posição e da largura do pico G, e da razão I D/I G são correlacionados com as mudanças estruturais nos filmes.

Carbon nitride films prepared by ion beam assisted deposition were studied by Raman and infrared spectroscopy, as a function of nitrogen ion energy (200, 400, and 600 eV) and the ion to atom arrival rate ratio R(I/A) ranging from 0.9 to 2.5. The composition ratio N/C in the film determined by elastic recoil detection analysis was found to be proportional to R(I/A); however, the film growth is possible only if R(I/A) is smaller than a critical value of chemical sputtering yield. This value was found to be 0.21. The maximum value of N/C obtained was 0.9 (47 at.% of nitrogen) for the film deposited with ion energy of 400 eV. In order to understand the effect of nitrogen incorporation on the structure of the films, the parameters were determined from the Raman spectra analysis of the films and found to show strong dependences of the nitrogen content in the films; the behaviors of the G peak position and width, and I D/I G ratio are correlated with the structure changes in the films.

O objetivo deste estudo foi determinar a habilidade de corte das pontas de diamante obtidas pelo processo de deposição química a vapor (CVD) associadas ao aparelho de ultra-som no preparo cavitário minimamente invasivo. Uma cavidade padronizada foi preparada nas faces mesial e distal de 40 terceiros molares, utilizando-se pontas de diamante CVD cilíndrica e esférica. A habilidade de corte foi comparada quanto ao tipo de substrato (esmalte e dentina) e quanto à direção do movimento realizado com a ponta. As características morfológicas, a largura e profundidade das cavidades foram analisadas e medidas em microscopia eletrônica de varredura. A análise estatística pelo teste de Kruskal-Wallis (p < 0,05) revelou que a largura e profundidade das cavidades foram significativamente maiores em dentina. Cavidades mais largas foram obtidas quando se utilizou a ponta de diamante CVD cilíndrica, e mais profundas quando a ponta esférica foi empregada. A direção do movimento da ponta não influenciou o tamanho das cavidades, sendo os cortes produzidos pelas pontas de diamante CVD precisos e conservadores.

The aim of this study was to determine the cutting ability of chemical vapor deposition (CVD) diamond burs coupled to an ultrasonic dental unit handpiece for minimally invasive cavity preparation. One standard cavity was prepared on the mesial and distal surfaces of 40 extracted human third molars either with cylindrical or with spherical CVD burs. The cutting ability was compared regarding type of substrate (enamel and dentin) and direction of handpiece motion. The morphological characteristics, width and depth of the cavities were analyzed and measured using scanning electron micrographs. Statistical analysis using the Kruskal-Wallis test (p < 0.05) revealed that the width and depth of the cavities were significantly greater when they were prepared on dentin. Wider cavities were prepared when the cylindrical CVD bur was used, and deeper cavities resulted from preparation with the spherical CVD bur. The direction of handpiece motion did not influence the size of the cavities, and the CVD burs produced precise and conservative cutting.

Surfaces with very poor mechanical and frictional properties can be improved, or even, acquire new properties similar to diamond if good adherent CVD diamond film is obtained on it. In this work, nitrogen ions were sub-implanted on pure molybdenum as a means to enhance CVD diamond film adherence. Deposition time from 2 up to 60 h were used for deposition of 10 to 400 µm thick CVD diamond films with very good adherence on sub-implanted molybdenum substrate. Characterizations were carried out by XPS, X-ray diffraction and nano indentation on prepared surfaces prior to diamond growth and after the onset nucleation. The ionic sub-implantation with nitrogen possibly assists in adhesion, with the creation of a thin layer of nitrates and complexes.

Boron-doped polycrystalline diamond films have been deposited over silicon substrate by hot-filament chemical-vapor-deposition process. A gas mixture of 0,5 vol. % methane and 1 vol. % methanol on hydrogen at a pressure of 50 Torr, have been used. Boric oxide dissolved in methanol have been used as the boron doping source during the diamond growth process. Raman spectroscopy and Scanning Electron Microscopy (SEM) have been performed on the samples. A change of Raman spectra with film doping was observed. The diamond characteristic line at 1333 cm-1 down shifted and its intensity decreased as the film resistivity decreased. On the other hand, a broad peak around 1220 cm-1 appeared and its intensity increased with decreasing film resistivity. No modifications on films morphology have been observed with different boron doping level. The grains were well-faceted with 2 <FONT FACE="Symbol">m</font>m average size