In the present work, mixed manganese-copper ferrite of composition MnxCu1-xFe2O4 (within x=0.40, 0.42, 0.44, 0.46, 0.48 and 0.50) have been investigated for their electric and magnetic properties such as dc resistivity, Curie temperature, saturation magnetization. MnxCu1-xFe2O4 ferrite samples were prepared by uniaxial pressing from the oxide mixture, synthesized at 1000°C during 45 hours and finally heated to 1200°C by 5h, at room atmosphere. The X-ray diffractograms show that the samples with different compositions were formed by compact structure spinel with cubic cell. The saturated magnetization of the MnxCu1-xFe2O4 ferrites increased with x up to 0.46, which presented the smallest coercitive field. All samples showed hysteresis characteristic of soft magnetic materials. This electrical behavior is compatible with an insulator. The results were analyzed in the framework of grain/barrier model.

Magnetoresistance measurements were performed on an illuminated semi-insulating GaAs sample with intrinsic deep level defects. Electrical carriers were photo-generated under light excitation and positive magnetoresistance for B < 0.2 T was observed in the whole range of temperatures measured (220-315 K). Using the model developed by H. Fukuyama and K. Hoshino, we interpreted the positive magnetoresistance as mainly caused by weak antilocalization effects over hole carriers for T > 240 K. The high disorder originated from the low temperature growth of the sample leads to the strong localization of carriers and gives rise to the positive magnetoresistance observed at temperatures as high as room temperature.