Estudos eletroquímicos localizados de grãos individuais de uma liga policristalina Cu-16%Zn-8%Al foram realizados em solução de tampão borato (pH 8,4) por meio da técnica eletroquímica com microcapilar. As orientações dos grãos, determinadas pelo método de retro-reflexão de Laue, foram predominantemente próximas à direção [110], sugerindo uma texturização da amostra. As medidas de potencial em circuito aberto mostraram que o menor potencial de estado estacionário foi observado para o grão que possui o maior número de degraus na superfície da liga. Os experimentos de voltametria cíclica sugeriram que a orientação do Cu2O segue a orientação do substrato na liga Cu-Zn-Al, enquanto que CuO cresce independentemente.

Local electrochemical studies of single grains of a polycrystalline Cu-16%Zn-8%Al alloy were investigated in borate buffer solution (pH 8.4) by means of microelectrochemical technique. The grain orientations, which were determined by the Laue back-reflection method, were predominantly close to [110] direction, suggesting that the sample was texturized. The open circuit potential measurements showed that the lower steady state potential was observed for the grain which has the highest number of steps on the alloy surface. The cyclic voltammetry experiments suggested that the orientation of Cu2O follows the substrate one in the Cu-Zn-Al alloy, while CuO grows independently.

A martensitic single crystal Cu-23.95Zn-3.62(wt.%)Al alloy was obtained melting pure Cu, Zn and Al using Bridgman's method. The martensitic phase (monoclinic) can present up to 24 variants, and orienting the surface according to a certain plane is a very hard task. The single crystal was submitted to 8 tons of tension (stress) along the longitudinal direction to reduce the number of variants and facilitate the surface orientation according to the desired plane. This single crystal was oriented using the Laüe back-reflection method to give surfaces with the following oriented crystallographic planes: (010), (120) and (130). It was observed that the tension stress was applied along the [010] direction.

This paper describes the drawing, construction and optimization of a device, which can be used to obtain single crystals of different metallic materials with melting point from 550 to 1050 ºC. Components of ease obtaining and of low cost were used. The device was based on the modified Bridgman technique and it was used to obtain single crystals of copper-based alloys. The temperature axial profiles and a difference less then 1% in the temperature between the wall and the center of the ceramic tube in the critical region for obtaining single crystals of good quality indicated that the oven presents a good thermal stability. Single crystals of CuZnAl and CuAlAg alloys of good quality were growth and characterized using optical microscopy and Laüe X-ray back reflection.