Cadmium sulphide (CdS) thin films deposited on indium tin oxide (ITO) substrates were prepared by chemical bath deposition technique by using different conditions to agitate the bath and the substrate. For substrate, an oscillating device working at 37 Hz was adapted to support each ITO substrate in order to agitate the substrate during deposition, meanwhile the chemical solution is heated and/not agitated. The deposited films were characterized on their morphology, on the band gap energy, and on thickness. The implemented novel technique for substrate oscillation has shown to improve the films quality, by the chemical bath without colloidal precipitates and by the clean film surfaces obtained. CdS films with variable deposition time can be achieved depending on the agitating technique. The mean band gap energy obtained around 2.41 eV is similar to the typical value reported in the literature for this material. In addition, by oscillating only the substrate during deposition is possible to obtain clean films and avoid the formation of colloidal precipitates on the chemical bath, normally presented when it is magnetically or ultrasonically agitated.
Cadmium sulphide; Chemical bath deposition; Oscillating agitation
