ABSTRACT: A field effect transistor - FET made from poly(o-methoxyaniline) (POMA), which is a conductive polymer, was developed. Several modifications were carried out to adapt the procedures generally used in traditional device developments. The characteristic of the FET produced was sensible to the gate modulation, but it operates even for V G = 0. The drain current I D enhanced under visible and near infrared radiation, showing the photoconductor character of POMA and, consequently, of the device. A theoretical model, based on the electronic properties of POMA and on the metal-polymer interface, was developed which is in good agreement with the experimental results.
Electronic devices; field effect transistors; photoconductivity; conducting polymers; applications
