ABSTRACT
This work compares the properties of different transparent conducting oxides for use as frontal contact in CdTe thin films solar cells. The films were deposited at room temperature by radio frequency sputtering without heat treatment, in order to reduce the manufacturing process steps. The resistance/transmittance relation was evaluated using a figure of merit, in order to propose the best material to act as front electrode of the solar cell. The oxides investigated in this work were separated into two groups: low-resistivity and high-resistivity oxides. Electrodes were prepared with these oxides and were subjected to thermal stability tests at the elevated temperatures involved in the solar cell processing. The results showed that ZnO and Zn2SnO4 films are high-resistivity oxides (> 0,5 (.cm), while SnO2, In2O3, In2O3:Sn, Cd2SnO4, and ZnO:Al are low-resistivity (< 5,0 x 10-3 (.cm) and high transmittance (> 85%) oxides. The In2O3:Sn and ZnO:Al films were the best options for the production of the electrodes, as their resistivity and transmittance values ranged from 10-3-10-4 (.cm and 85-92%, respectively. However, taking into consideration the cost and shortage issues, ZnO:Al films are the suitable choice for this application, because in addition to having high values of conductivity and transmittance, they have demonstrated thermal stability at elevated temperatures.
Keywords:
conducting transparent oxides; transparent electrodes; solar cells; thin films.
