The aim of this work was the reduction of the intrinsic stress caused by the impurities added in the diamond film growth process by Chemical Vapor Deposition (CVD) in a hot filament reactor (HFCVD). Silicon <100> substrate of 250 µm thickness with a deposition surface of great area (45 cm²), was treated after each growth run through the immersion of the sample in a saturated solution of H2SO4 and CrO3 and, after that, in a H2O2:NH4OH solution 1:1. After this procedure, new stage of growth was carried through. The CVD diamond film was identified and characterized by Raman Scattering Spectroscopy (RSS) and Scanning Electron Microscopy (SEM). The application of this technique showed better results compared to previous one. The thickness of the deposited CVD diamond film doubled, obtaining lesser residual stress in the diamond film. CVD diamond films of 60 mm thickness were obtained with high quality and uniformity.
Diamond CVD; growth; hot filament; large areas
