In the present work we develop a theoretical study to analyze how the image charges effects can modify the electronic properties in Si and SrTiO3-based quantum wells. We have used the method based on the calculation of the image charge potential by solving Poisson equation in cylindrical coordinates. The numerical results show that the electron-heavy hole recombination energy can be shifted by more than 200 meV due to the combination of charge image and SiO2 (SrTiO3) interface thickness effects.
Energy Levels; Si; SrTiO3-based quantum wells
