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Materials Research

Print version ISSN 1516-1439

Abstract

LIN, Shenghuang; CHEN, Zhiming; LI, Lianbi  and  YANG, Chen. Effect of impurities on the Raman scattering of 6H-SiC crystals. Mat. Res. [online]. 2012, vol.15, n.6, pp. 833-836.  Epub Sep 04, 2012. ISSN 1516-1439.  http://dx.doi.org/10.1590/S1516-14392012005000108.

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al- and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

Keywords : Raman scattering; 6H-SiC; impurity.

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