Print version ISSN 1516-1439
MONDAL, Shampa; KANTA, Kalyani Prasad and MITRA, Partha. Preparation of ZnO film on p-Si and I-V characteristics of p-Si/n-ZnO. Mat. Res. [online]. 2013, vol.16, n.1, pp. 94-99. Epub Nov 02, 2012. ISSN 1516-1439. http://dx.doi.org/10.1590/S1516-14392012005000149.
Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 µm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 µm. Scanning electron microscopy (SEM) reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains) on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag) on ZnO and Aluminum (Al) on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si/n-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.
Keywords : chemical dipping; p-Si [n-ZnO]; orientation; heterojunction.