Resumo

MAURITY, A.J.S et al. Construction of a system for characterization of transport properties of thin films by Hall effect. Rev. Bras. Ensino Fís. [online]. 2012, vol.34, n.1, pp. 1-8. ISSN 1806-1117.  http://dx.doi.org/10.1590/S1806-11172012000100007.

In this work was built a system to determine transport properties such as electrical resistivity, charge carrier density and mobility of thin films using Hall effect in special conditions of undergraduate laboratory using no special materials either instruments. SnO2 thin films doped with fluor obtained by chemical process were characterized using the developed methodology and presented consistent results those reported in literature.

Palavras-chave : Hall Effect; thin film; resistivity; mobility; charge carriers.