Resumo

ORLANDO, M. T. D. et al. Hg_0.8Re_0.2Ba₂Ca₂Cu ₃O_8.8 thick film produced by Laser Ablation. J. Microw. Optoelectron. Electromagn. Appl. [online]. 2011, vol.10, n.1, pp. 114-120. ISSN 2179-1074.  http://dx.doi.org/10.1590/S2179-10742011000100012.

This paper describes the development of Hg_0.8Re_0.2Ba₂Ca₂Cu ₃O_8.8 thick film prepared with a precursor Ba₂Ca₂Cu₃O_5+d thick film, which was layered by Laser Ablation technique on PrBa₂Cu₃O₇ substrate. The precursor thick film was thermally treated under mercury atmosphere using an encapsulate quartz tube technique. DC critical current measurements below T_C determined the thick film superconductor current critical density as a function of temperature. The general behavior of the critical current density as a function of temperature confirms that the (Hg,Re)-1223 thick film has junctions type classified as superconducting-insulate-superconducting (SIS). After the critical current test the superconductor thick film has not shown any degradation or stoichiometry loss and its critical temperature has not changed after the test. Taken into account the critical current value of thick film as compared with the bulk sample, it was suggested that the procedure described here can be applied to build most electronic-type applications based on (Hg,Re)-1223 ceramic thick film.

Palavras-chave : (Hg,Re)-1223; fault current limiter; laser ablation; thick film.