Abstract
An attempt has been made to present a new device which will function as a highly efficient SDR (Single Drift Region) P+-N- N+ IMPATT diode utilizing the advantages of a junctionless field effect transistor. The basic idea is to convert a uniform N+ region into a (P+-N-N+) structure without any requirement of physical doping. As the present device works on the principle of a junctionless channel, variability and short channel effects are significantly reduced as compared to the conventional TFET though the requirement of an extra gate increases a few fabrication steps. Further, efficiency more than conventional SDR IMPATT diode is achievable without any physical doping.
Index Terms
ControlGate; efficiency; electric field; IMPATT; P-gate; SDR
