Technology roadmap for development of SiC sensors at plasma processes laboratory

Fraga, Mariana Amorim; Pessoa, Rodrigo Sávio; Maciel, Homero Santiago; Massi, Marcos; Oliveira, Ivo de Castro

doi:10.5028/jatm.2010.02027210

Abstract:

Recognizing the need to consolidate the research and development (R&D) activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA) has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC) thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i) introduction, ii) what we have already done in the past, iii) what we are doing in this moment, and iv) our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.

Keywords:
Silicon carbide; Sensors; Aerospace applications; Roadmap; Project planning

Full text is available only in PDF.

REFERENCES

Cocuzza, M., 2004, "Development of Silicon and Silicon Carbide-Based Micro-electromechanical Systems", PhD thesis in Electronics, University of Trento.
Fraga, M. A., 2009, "Desenvolvimento de sensores piezoresistivos de SiC visando aplicação em sistemas aeroespaciais", PhD thesis in Mechanical Engineering, Technological Institute of Aeronautics.
Fraga, M. A. et al, 2010a, "Effect of nitrogen doping on piezoresistive properties of a-Si_x C_y thin film strain gauges", Microsystem Technologies, Vol. 16, pp. 925-930.
Fraga, M. A. et al, 2010b, "Fabrication and characterization of piezoresistive strain sensors for high temperature applications", Proceedings of IEEE International Conference on Industrial Technology (IEEE-ICIT), pp. 513-516.
Fraga, M. A. et al, 2008a, "Nitrogen doping of SiC thin films deposited by RF magnetron sputtering", Journal of Materials Science: Materials in Electronics, Vol. 19, pp. 835-840.
Fraga, M. A. et al, 2008b, "Etching Characteristics and Surface Morphology of Nitrogen-Doped a-SiC Films Prepared by RF Magnetron Sputtering", Proceedings of Symposium on Microelectronics Technology and Devices, ECS Transactions, Vol. 14, pp. 375-384.
Fraga, M. A. et al, 2007a, "Etching Studies of Post-Annealed SiC Film Deposited by PECVD: Influence of the Oxigen Concentration", Proceedings of Symposium on Microelectronics Technology and Devices, ECS Transactions, Vol. 9, pp.227-234.
Fraga, M. A. et al, 2007b, "Synthesis and Etching of Amorphous Silicon Carbide Thin Films with High Carbon Content", Revista Brasileira de Aplicações de Vácuo, Vol. 26, pp.193-197.
Kanicki, J., 1991, "Amorphous and microcrystalline semiconductors devices", Artech House, Norwood.
Muller, St. G., 2001, "Progress in the industrial production of SiC substrates for semiconductor devices", Materials Science and Engineering B, Vol. 80, pp. 327-321.
Nowak, O., 2005, Press Release - Wicht Technologie Consulting, "Silicon Carbide Electronics Markets 2004-2009: New Horizons for Power Electronics", USA.
Prado, R. J., 1997, "Propriedades químicas e morfológicas de filmes hidrogenados de carbeto de silício amorfo", Dissertação de Mestrado apresentada ao Instituto de Física da USP.
Rajab, S. M., 2005, "Efeitos do recozimento térmico nas propriedades físicas e elétricas do filme de carbeto de silício", Master Dissertation in Mechanical Engineering, Technological Institute of Aeronautics.
Rajab, S. M. et al, 2006, "Effect of the thermal annealing on the electrical and physical properties of RF magnetron sputtering produced SiC thin films", Thin Solid Films, Vol. 515, pp. 170-175.
Sarro, P. M., 2000, "Silicon Carbide as a new MEMS technology", Sensors and Actuators A, pp. 210-218.
Shockley, W., 1959, "Method of growing silicon carbide crystals", Proceedings of the First International Conference on Silicon Carbide, Boston.
Spear, W.E., LeComber, P. G., 1975, "Substitutional doping of amorphous silicon", Solid State Communications, Vol. 17, pp. 1193-1196.
Tawada, Y., et al, 1982, "Properties and structure of a-SiC:H for high-efficiency a-Si solar cell", Journal of Applied Physics, Vol. 53, pp. 5273-5281.
Wu, H. et al, 2001, "Fabrication and Testing of Single Crystalline 3C-SiC piezoresistive Pressure Sensors", Eurosensors XV, International Conference on Solid-State Sensors and Actuators.

Publication Dates

Publication in this collection
May-Aug 2010

History

Received
01 June 2010
Accepted
30 June 2010

This is an Open Access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

[1] Cocuzza, M., 2004, "Development of Silicon and Silicon Carbide-Based Micro-electromechanical Systems", PhD thesis in Electronics, University of Trento.

[2] Fraga, M. A., 2009, "Desenvolvimento de sensores piezoresistivos de SiC visando aplicação em sistemas aeroespaciais", PhD thesis in Mechanical Engineering, Technological Institute of Aeronautics.

[3] Fraga, M. A. et al, 2010a, "Effect of nitrogen doping on piezoresistive properties of a-Si_x C_y thin film strain gauges", Microsystem Technologies, Vol. 16, pp. 925-930.

[4] Fraga, M. A. et al, 2010b, "Fabrication and characterization of piezoresistive strain sensors for high temperature applications", Proceedings of IEEE International Conference on Industrial Technology (IEEE-ICIT), pp. 513-516.

[5] Fraga, M. A. et al, 2008a, "Nitrogen doping of SiC thin films deposited by RF magnetron sputtering", Journal of Materials Science: Materials in Electronics, Vol. 19, pp. 835-840.

[6] Fraga, M. A. et al, 2008b, "Etching Characteristics and Surface Morphology of Nitrogen-Doped a-SiC Films Prepared by RF Magnetron Sputtering", Proceedings of Symposium on Microelectronics Technology and Devices, ECS Transactions, Vol. 14, pp. 375-384.

[7] Fraga, M. A. et al, 2007a, "Etching Studies of Post-Annealed SiC Film Deposited by PECVD: Influence of the Oxigen Concentration", Proceedings of Symposium on Microelectronics Technology and Devices, ECS Transactions, Vol. 9, pp.227-234.

[8] Fraga, M. A. et al, 2007b, "Synthesis and Etching of Amorphous Silicon Carbide Thin Films with High Carbon Content", Revista Brasileira de Aplicações de Vácuo, Vol. 26, pp.193-197.

[9] Kanicki, J., 1991, "Amorphous and microcrystalline semiconductors devices", Artech House, Norwood.

[10] Muller, St. G., 2001, "Progress in the industrial production of SiC substrates for semiconductor devices", Materials Science and Engineering B, Vol. 80, pp. 327-321.

[11] Nowak, O., 2005, Press Release - Wicht Technologie Consulting, "Silicon Carbide Electronics Markets 2004-2009: New Horizons for Power Electronics", USA.

[12] Prado, R. J., 1997, "Propriedades químicas e morfológicas de filmes hidrogenados de carbeto de silício amorfo", Dissertação de Mestrado apresentada ao Instituto de Física da USP.

[13] Rajab, S. M., 2005, "Efeitos do recozimento térmico nas propriedades físicas e elétricas do filme de carbeto de silício", Master Dissertation in Mechanical Engineering, Technological Institute of Aeronautics.

[14] Rajab, S. M. et al, 2006, "Effect of the thermal annealing on the electrical and physical properties of RF magnetron sputtering produced SiC thin films", Thin Solid Films, Vol. 515, pp. 170-175.

[15] Sarro, P. M., 2000, "Silicon Carbide as a new MEMS technology", Sensors and Actuators A, pp. 210-218.

[16] Shockley, W., 1959, "Method of growing silicon carbide crystals", Proceedings of the First International Conference on Silicon Carbide, Boston.

[17] Spear, W.E., LeComber, P. G., 1975, "Substitutional doping of amorphous silicon", Solid State Communications, Vol. 17, pp. 1193-1196.

[18] Tawada, Y., et al, 1982, "Properties and structure of a-SiC:H for high-efficiency a-Si solar cell", Journal of Applied Physics, Vol. 53, pp. 5273-5281.

[19] Wu, H. et al, 2001, "Fabrication and Testing of Single Crystalline 3C-SiC piezoresistive Pressure Sensors", Eurosensors XV, International Conference on Solid-State Sensors and Actuators.

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