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Brazilian Journal of Physics
versión On-line ISSN 1678-4448


Special Issue: Proceedings of the 9th Brazilian Workshop on Semiconductor Physics'98

Tabla de contenido
Braz. J. Phys. v.29 n.4 São Paulo dic. 1999

Proceedings of the 9th Brazilian Workshop on Semiconductor Physics

"Ab initio" studies of hydrogen-enhanced oxygen diffusion in silicon
Capaz, R. B.; Assali, L. V. C.; Kimerling, L. C.; Cho, K.; Joannopoulos, J. D.

Erbium in a-Si:H
Tessler, Leandro R.

Metal-insulator transition in two dimensions
Kravchenko, S. V.

Nonlinear spatio-temporal dynamics in semiconductors
Schöll, Eckehard

Spin depolarization in quantum dots
Sachrajda, A.S.; Gould, C.; Hawrylak, P.; Feng, Y.; Zawadzki, P.; Wasilewski, Z.

Ab initio calculation of linear and nonlinear optical properties of semiconductor structures
Bechstedt, F.; Adolph, B.; Schmidt, W. G.

Minibands and Wannier-Stark ladders in semiconductor superlattices studied by infrared spectroscopy
Helm, M.; Hilber, W.; Strasser, G.; DeMeester, R.; Peeters, F. M.

An order-N study of dislocations in homopolar semiconductors
Nunes, R.W.

Electric field effects on the confinement properties of GaN/Alx Ga1-xN zincblende and wurtzite nonabrupt quantum wells
Wang, H.; Farias, G. A.; Freire, V. N.

Cyclotron mass of electrons in GaN-AlxGa1-xN heterostructures
Oliveira, Solemar Silva; Souza, Marcio Adriano R.; Borges, Antonio Newton; Osório, Francisco A. Pinto

Interband magneto-absorption in narrow-gap semiconductor quantum wells
López-Richard, V.; Marques, G. E.; Trallero-Giner, C.

Evolution of dynamic localization regimes in coupled minibands
Rivera, P. H.; Schulz, P. A.

Ambipolar carrier diffusion in In0.53Ga0.47As single quantum wells
Monte, A.F.G.; Silva, S.W. da; Cruz, J.M.R.; Morais, P.C.; Cox, H.M.

A quantum formalism for a terahertz acoustic laser
Camps Rodríguez, Ihosvany; Makler, Sergio Saul; Anda, Enrique Victoriano

Spin-flip scattering contribution to resonant-tunneling current in semimagnetic semiconductor heterostructures
Chitta, V. A.; Maialle, M. Z.; Leão, S. A.; Degani, M. H.

High magnetic field transport and photoluminescence in doped InGaAs/InP superlattices
Henriques, A.B.; Hanamoto, L.K.; Oliveira, R.F.; Souza, P.L.; Gonçalves, L.C.D.; Yavich, B.

Magnetotransport in a spatially modulated magnetic field
Gusev, G.M.; Quivy, A. A.; Leite, J.R.; Bykov, A. A.; Moshegov, N.T.; Kudryashev, V.M.; Toropov, A.I.; Nastaushev, Yu.V.

Quantum hall effect in a wide parabolic quantum well
Gusev, G.M.; Leite, J.R.; Olshanetskii, E.B.; Maude, D.K.; Cassé, M.; Portal, J.C.; Moshegov, N.T.; Toropov, A.I.

Spin-dependent resonant tunneling in semiconductor nanostructures
Silva, Erasmo A. de Andrada e; La Rocca, Giuseppe C.

Temperature dependence of the absorption coefficient in doped quantum wells
Baldan, M.R.; Serra, R.M.; Emmel, P.D.; Silva, A. Ferreira da

Stochastic dynamics of 2D electrons in antidot lattice in the presence of an in-plane magnetic field
Choque, N.M. Sotomayor; Santos, M.T. dos; Gusev, G.M.; Leite, J.R.; Kvon, Z.D.

Electronic structure in narrow-gap quantum dots
Prado, S. J.; Marques, G. E.; Trallero-Giner, C.

Inelastic coulomb scattering rate of a multisubband Q1D electron gas
Tavares, M.; Hai, G.-Q.

Electronic coupling and thermal relaxation in self-assembled InAs quantum dot superlattices
Petitprez, E.; Moshegov, N.T.; Marega Jr., E.; Basmaji, P.; Mazel, A.; Dorignac, D.; Fourmeaux, R.

Metal-insulator transition at B=0 in an AlGaAs/GaAs two-dimensional electron gas under the influence of InAs self-assembled quantum dots
Ribeiro, E.; Jäggi, R.; Heinzel, T.; Ensslin, K.; Medeiros-Ribeiro, G.; Petroff, P. M.

Strain and relaxation processes in In1-xGaxAsyP1-y/ InP single quantum wells grown by LP-MOVPE
Bernussi, A.A.; Carvalho Jr., W.; Furtado, M.T.; Gobbi, A.L.

Influence of laser excitation on raman and photoluminescence spectra and FTIR study of porous silicon layers
Salcedo, Walter Jaimes; Ramirez Fernandez, Francisco J.; Rubimc, Joel C.

Environment of Er in a-Si:H: co-sputtering versus ion implantation
Piamonteze, Cínthia; Tessler, Leandro R.; Alves, M. C. Martins; Tolentino, H.

Electrochemical characterization on semiconductors p-type CVD diamond electrodes
Ferreira, N. G.; Silva, L. L. G.; Corat, E. J.; Trava-Airoldi, V. J.; Iha, K.

Size effects on the growth mode and roughness of sub-micron structures grown by selective area epitaxy
Gutiérrez, H.R.; Cotta, M.A.; Nakaema, W.M.; Carvalho,; Gobbi, A.L.

Plasma ion implantation of nitrogen into silicon: high resolution x-ray diffraction
Beloto, A. F.; Abramof, E.; Ueda, M.; Berni, L. A.; Gomes, G. F.

Band crossing evidence in PbSnTe observed by optical transmission measurements
Ferreira, S. O.; Abramof, E.; Motisuke, P.; Rappl, P. H. O.; Closs, H.; Ueta, A. Y.; Boschetti, C.; Bandeira, I. N.

Quasi-fermi levels, chemical and electric potential profiles of a semiconductor under illumination
Santos, A. M. dos; Beliaev, D.; Scolfaro, L. M. R.; Leite, J. R.

A tight-binding study of acceptor levels in semiconductors
Menchero, J. G.

High temperature behavior of subpicosecond electron transport transient in 3C- and 6H-SiC
Bezerra, E. F.; Caetano, E. W. S.; Freire, V. N.; Silva Jr., E. F. da; Costa, J. A. P. da

SXS and XPS study of the adsorption and desorption of Te on GaAs (100)
González, J.C.; Rodrigues, W.N.; Silva, C.M.; Moreira, M.V.B.; Oliveira, A.G. de; Abbate, M.; Vicentin, F.C.

Impurity breakdown in GaAs samples grown by molecular beam Epitaxy
Rubinger, R.M.; Oliveira, A.G. de; Ribeiro, G.M.; Bezerra, J.C.; Silva, C.M.; Rodrigues, W.N.; Moreira, M.V.B.

Observation of low frequency oscillations in GaAs samples grown by molecular beam epitaxy at low temperatures
Rubinger, R. M.; Oliveira, A. G. de; Ribeiro, G. M.; Soares, D. A. W.; Moreira, M. V. B.

Atomic geometry and energetics of native defects in cubic boron nitride
Orellana, W.; Chacham, H.

Experimental evidence for the distinction between metastability and persistence in optical and electronic properties of bulk GaAs and AlGaAs
Pinheiro, M.V.B; Krambroc, K.

Theoretical study of surfactant action of Te on Si(001)/Ge surfaces
Miwa, R. H.; Takahashi, E. K.

Theoretical study of Si(001)/Te - (1×1), (2×1) and (3×1) surfaces
Miwa, R. H.; Ferraz, A. C.

Ab initio theoretical studies of atomic and electronic structures of III-nitride (110) surfaces
Alves, H. W. Leite; Alves, J. L. A.; Nogueira, R. A.; Leite, J. R.

Tellurium - modified surface states of GaAs(001) and InAs(001)
Silva, R. Claudino da; Ferraz, A. C.

Vacancy diffusion in silicon: analysis of transition state theory
Gattass, R. R.; Koiller, Belita; Capaz, R. B.

Dynamics of internal electric and phonon fields in n-GaAs pumped with ultrashort pulses
Souza, Fabrício M.; Egues, J. Carlos

Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase
Dargam, T. G.; Capaz, R. B.; Koiller, Belita

Morphological, optical and structural properties of zero-net-strained InGaAsP/InP structures grown by LP-MOVPE for 1.55mm laser applications
Carvalho Jr, Wilson de; Bernussi, Ayrton André; Furtado, Mario Tosi; Gobbi, Angelo Luiz; Cotta, Mônica