| | Proccedings of the 10th Brazilian Workshop on Semiconductor Physics
Table of contents
Braz. J. Phys. vol.32 no.2a São Paulo June 2002 Proceedings of the 10th Brazilian Workshop on Semiconductor Physics
Schulz, Peter A. B.
| | | |  Invited lectures | | | | | | · Manipulating electrons in nanostructured semiconductors
Kotthaus, Jörg P.
| | | | | | · Semiconductor superlattices: artificial crystals with unique electronic and transport properties
Grahn, H. T.
| | | | | | · Laser effects in semiconductor heterostructures within an extended dressed-atom approach
Brandi, H.S.; Latgé, A.; Oliveira, L.E.
| | | | | | · Spin dynamics driven by the electron-hole exchange interaction in quantum wells
Maialle, M. Z.
| | | | | | · nipi delta-doping superlattices for amplitude modulation
Tribuzy, C. V.-B.; Landi, S. M.; Pires, M. P.; Butendeich, R.; Souza, P. L.; Bittencourt, A. C.; Marques, G. E.; Henriques, A. B.
| | | | | | · The regime of electromagnetically induced transparency in optically dense media: from atoms to excitons
Artoni, M.; Bassani, F.; Carusotto, I.; La Rocca, G.C.
| | | | | Heterostructures, mesoscopic and strongly correlated systems | | | | | | · Electron-acoustic phonon scattering rates in spherical quantum dots: contribution of the macroscopic deformation potential
Alcalde, A. M.; Marques, G. E.; Weber, G.; Reinecke, T. L.
| | | | | | · Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots
Chiquito, A. J.; Pusep, Yu. A.; Mergulhão, S.; Gobato, Y. Galvão; Galzerani, J. C.
| | | | | | · Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers
Silva, M. J. da; Quivy, A. A.
| | | | | | · Effect of the lead dimensionality over transport properties in quantum dots
Craco, L.; Cuniberti, G.
| | | | | | · Ballistic transport in semiconductor quantum wires in the presence of defects
Rocha, A. R.; Brum, J. A.
| | | | | | · Electron-phonon interaction in electronic tunneling: from sequential rate equations to a coherent description
Torres, L.E.F. Foa; Pastawski, H.M.; Makler, S. S.
| | | | | | · Zeeman effect in Cd1-xMnxTe parabolic and half-parabolic quantum wells
Cunha, J. F. R.; Osório, F. A. P.; Borges, A. N.; Souza, M. A. R.
| | | | | | · Anomalous shift of the recombination energy in single asymmetric quantum wells
Dantas, N.O.; Qu, Fanyao; Morais, P.C.
| | | | | | · Exciton trapping in a periodically modulated magnetic field
Freire, J.A.K.; Freire, V.N.; Farias, G.A.; Peeters, F.M.
| | | | | | · Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells
Laureto, E.; Meneses, E. A.; Carvalho Jr., W.; Bernussi, A. A.; Ribeiro, E.; Silva, E. C. F. da; Oliveira, J. B. B. de
| | | | | | · Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells
Ribeiro, F.J.; Capaz, R.B.; Koiller, Belita
| | | | | | · Resonant tunneling of polarized electrons through nonmagnetic III-V semiconductor multiple barriers
Araújo, C. Moysés; Silva, A. Ferreira da; Silva, E. A. de Andrada e
| | | | | | · Shot noise in the presence of spin-flip scattering
Brito, F.G.; Egues, J.C.
| | | | | | · Subband structure of II-VI modulation-doped magnetic quantum wells
Freire, Henrique J. P.; Egues, J. Carlos
| | | | | | · Transport and optical properties of resonant tunneling structures
Vercik, A.; Gobato, Y. Galvão; Mendoza, M.; Schulz, P.A.
| | | | | | · Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices
Hanamoto, L. K.; Henriques, A. B.; Tribuzy, C. V.-B.; Souza, P. L.; Yavich, B.; Abramof, E.
| | | | | | · Frictional drag between non-equilibrium electron gases
Wang, X. F.; Lima, I. C. da Cunha
| | | | | | · Diffusive-like minibands in finite superlattices of disordered quantum wells
Rey-González, R.R.; Machado, E.; Schulz, P.A.
| | | | | | · Low-temperature electron mobility in parabolic quantum wells
Seraide, R. M.; Hai, G.-Q.
| | | | | | · Landau levels in two and three-dimensional electron gases in a wide parabolic quantum well
Sergio, C.S.; Gusev, G.M.; Leite, J.R.; Olshanetskii, E.B.; Bykov, A.A.; Moshegov, N.T.; Bakarov, A.K.; Toropov, A.I.; Maude, D.K.; Estibals, O.; Portal, J.C.
| | | | | | · Effective conductivity of two-dimensional heterostructures with non-screened potential
Vasko, F. T.; Hai, G.-Q.
| | | | | | · Carrier dynamics investigated by time resolved optical spectroscopy
Luyo, Saúl J.; Brasil, Maria S.P.; Carvalho, Hugo B. de; Carvalho Jr., Wilson de; Bernussi, Ayrton A.
| | | | | | · Study of dynamical dipole moment in an asymmetric double quantum well
Bohórquez, J.; Camacho B., A. S.
| | | | | Growth, processing and devices, bulk and surface properties, defects, and new materials | | | | | | · In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy
Martini, S.; Quivy, A. A.
| | | | | | · Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy
Ribeiro, M. L. P.; Yavich, B.; Tribuzy, C. V. B.; Souza, P. L.
| | | | | | · Local order structure of a-SiOxNy:H grown by PECVD
Scopel, W.L.; Fantini, M.C.A.; Alayo, M.I.; Pereyra, I.
| | | | | | · Surface instability and dislocation nucleation in strained epitaxial layers
Trushin, O.; Granato, E.; Ying, S.C.; Kosterlitz, J.M.; Ala-Nissila, T.; Salo, P.
| | | | | | · Preparation and characterization of nanocrystalline h-BN films prepared by PECVD method
Vilcarromero, J.; Carreño, M.N.P.; Pereyra, I.; Cruz, N. C.; Rangel, E.C.
| | | | | | · Pulsed laser crystallization of SiGe alloys on GaAs
Dondeo, F.; Santos, P. V.; Ramsteiner, M.; Comedi, D.; Pudenzi, M. A. A.; Chambouleyron, I.
| | | | | | · Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering
Lima Jr., M.M. de; Freire Jr., F.L.; Marques, F.C.
| | | | | | · Structural and chemical properties of ZnSe-Fe electrodeposited granular films
Moraes, A.R. de; Mosca, D.H.; Schreiner, W.H.; Mattoso, N.; Silveira, E.
| | | | | | · Many particle theory for the luminescence, characterization and simulation of quantum well laser structures
Pereira Jr., M.F.; Bernussi, A. A.; Carvalho Jr., W.; Furtado, Mario T.; Gobbi, A. L.
| | | | | | · Ionizing radiation and hot carrier effects in SiC MOS devices
Vasconcelos, E. A. de; Silva Jr., E. F. da; Katsube, T.; Yoshida, S.
| | | | | | · First-principles study of the adsorption of PH3 on Ge(001) and Si(001) surfaces
Miotto, R.; Ferraz, A. C.; Srivastava, G.P.
| | | | | | · Adsorption of Si and C atoms over SiC (111) surfaces
Vivas, P. G.; Silva, E. E. da; Carvalho, L. C. de; Alves, J. L. A.; Alves, H. W. Leite; Scolfaro, L. M. R.; Leite, J. R.
| | | | | | · On the morphology of films grown by droplet-assisted molecular beam epitaxy
Lamas, T. E.; Quivy, A. A.
| | | | | | · Hole transport characteristics in pure and doped GaSb
Messias, L.G.O.; Marega Jr., E.
| | | | | | · First-principles calculations of the effective mass parameters of AlxGa1-xN and ZnxCd1-xTe alloys
Paiva, R. de; Nogueira, R. A.; Oliveira, C. de; Alves, H. W. Leite; Alves, J. L. A.; Scolfaro, L. M. R.; Leite, J. R.
| | | | | | · Magnetic properties of gadolinium-doped amorphous silicon films
Sercheli, M.S.; Rettori, C.; Zanatta, A.R.
| | | | | | · Nonlinear dynamics time series analysis of chaotic current oscillations in a semi-insulating GaAs sample
Silva, R.L. da; Rubinger, R.M.; Oliveira, A.G. de; Ribeiro, G.M.
| | | | | | · Bare LO-phonon peak in THz-emission signals: a dielectric-function analysis
Souza, Fabrício M.; Egues, J. C.
| | | | | | · Structure and bonding of iron-acceptor pairs in silicon
Zhao, S.; Justo, J. F.; Assali, L. V. C.; Kimerling, L. C.
| | | | | | · A silicon-polymer heterostructure for sensor applications
Laranjeira, J. M. G.; Khoury, H. J.; Azevedo, W. M. de; Vasconcelos, E. A. de; Silva Jr., E. F. da
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