| Proccedings of the 10th Brazilian Workshop on Semiconductor Physics
Table of contents Braz. J. Phys. vol.32 no.2a São Paulo June 2002 Proceedings of the 10th Brazilian Workshop on Semiconductor Physics Schulz, Peter A. B.
| | | Invited lectures | | | | · Manipulating electrons in nanostructured semiconductors Kotthaus, Jörg P.
| | | | · Semiconductor superlattices: artificial crystals with unique electronic and transport properties Grahn, H. T.
| | | | · Laser effects in semiconductor heterostructures within an extended dressed-atom approach Brandi, H.S.; Latgé, A.; Oliveira, L.E.
| | | | · Spin dynamics driven by the electron-hole exchange interaction in quantum wells Maialle, M. Z.
| | | | · nipi delta-doping superlattices for amplitude modulation Tribuzy, C. V.-B.; Landi, S. M.; Pires, M. P.; Butendeich, R.; Souza, P. L.; Bittencourt, A. C.; Marques, G. E.; Henriques, A. B.
| | | | · The regime of electromagnetically induced transparency in optically dense media: from atoms to excitons Artoni, M.; Bassani, F.; Carusotto, I.; La Rocca, G.C.
| | | Heterostructures, mesoscopic and strongly correlated systems | | | | · Electron-acoustic phonon scattering rates in spherical quantum dots: contribution of the macroscopic deformation potential Alcalde, A. M.; Marques, G. E.; Weber, G.; Reinecke, T. L.
| | | | · Influence of annealing on the optical and electrical properties of multilayered InAs/GaAs quantum dots Chiquito, A. J.; Pusep, Yu. A.; Mergulhão, S.; Gobato, Y. Galvão; Galzerani, J. C.
| | | | · Anomalous blueshift in vertically coupled InAs/GaAs quantum dots using InGaAs strain-reducing layers Silva, M. J. da; Quivy, A. A.
| | | | · Effect of the lead dimensionality over transport properties in quantum dots Craco, L.; Cuniberti, G.
| | | | · Ballistic transport in semiconductor quantum wires in the presence of defects Rocha, A. R.; Brum, J. A.
| | | | · Electron-phonon interaction in electronic tunneling: from sequential rate equations to a coherent description Torres, L.E.F. Foa; Pastawski, H.M.; Makler, S. S.
| | | | · Zeeman effect in Cd1-xMnxTe parabolic and half-parabolic quantum wells Cunha, J. F. R.; Osório, F. A. P.; Borges, A. N.; Souza, M. A. R.
| | | | · Anomalous shift of the recombination energy in single asymmetric quantum wells Dantas, N.O.; Qu, Fanyao; Morais, P.C.
| | | | · Exciton trapping in a periodically modulated magnetic field Freire, J.A.K.; Freire, V.N.; Farias, G.A.; Peeters, F.M.
| | | | · Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wells Laureto, E.; Meneses, E. A.; Carvalho Jr., W.; Bernussi, A. A.; Ribeiro, E.; Silva, E. C. F. da; Oliveira, J. B. B. de
| | | | · Electric-field effects on the band-edge states of GaAs/AlAs coupled quantum wells Ribeiro, F.J.; Capaz, R.B.; Koiller, Belita
| | | | · Resonant tunneling of polarized electrons through nonmagnetic III-V semiconductor multiple barriers Araújo, C. Moysés; Silva, A. Ferreira da; Silva, E. A. de Andrada e
| | | | · Shot noise in the presence of spin-flip scattering Brito, F.G.; Egues, J.C.
| | | | · Subband structure of II-VI modulation-doped magnetic quantum wells Freire, Henrique J. P.; Egues, J. Carlos
| | | | · Transport and optical properties of resonant tunneling structures Vercik, A.; Gobato, Y. Galvão; Mendoza, M.; Schulz, P.A.
| | | | · Interfacial layers and impurity segregation in InP/In0.53Ga0.47As superlattices Hanamoto, L. K.; Henriques, A. B.; Tribuzy, C. V.-B.; Souza, P. L.; Yavich, B.; Abramof, E.
| | | | · Frictional drag between non-equilibrium electron gases Wang, X. F.; Lima, I. C. da Cunha
| | | | · Diffusive-like minibands in finite superlattices of disordered quantum wells Rey-González, R.R.; Machado, E.; Schulz, P.A.
| | | | · Low-temperature electron mobility in parabolic quantum wells Seraide, R. M.; Hai, G.-Q.
| | | | · Landau levels in two and three-dimensional electron gases in a wide parabolic quantum well Sergio, C.S.; Gusev, G.M.; Leite, J.R.; Olshanetskii, E.B.; Bykov, A.A.; Moshegov, N.T.; Bakarov, A.K.; Toropov, A.I.; Maude, D.K.; Estibals, O.; Portal, J.C.
| | | | · Effective conductivity of two-dimensional heterostructures with non-screened potential Vasko, F. T.; Hai, G.-Q.
| | | | · Carrier dynamics investigated by time resolved optical spectroscopy Luyo, Saúl J.; Brasil, Maria S.P.; Carvalho, Hugo B. de; Carvalho Jr., Wilson de; Bernussi, Ayrton A.
| | | | · Study of dynamical dipole moment in an asymmetric double quantum well Bohórquez, J.; Camacho B., A. S.
| | | Growth, processing and devices, bulk and surface properties, defects, and new materials | | | | · In-situ determination of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy Martini, S.; Quivy, A. A.
| | | | · Carbon doping of InAlAs layers grown by metalorganic vapor phase epitaxy Ribeiro, M. L. P.; Yavich, B.; Tribuzy, C. V. B.; Souza, P. L.
| | | | · Local order structure of a-SiOxNy:H grown by PECVD Scopel, W.L.; Fantini, M.C.A.; Alayo, M.I.; Pereyra, I.
| | | | · Surface instability and dislocation nucleation in strained epitaxial layers Trushin, O.; Granato, E.; Ying, S.C.; Kosterlitz, J.M.; Ala-Nissila, T.; Salo, P.
| | | | · Preparation and characterization of nanocrystalline h-BN films prepared by PECVD method Vilcarromero, J.; Carreño, M.N.P.; Pereyra, I.; Cruz, N. C.; Rangel, E.C.
| | | | · Pulsed laser crystallization of SiGe alloys on GaAs Dondeo, F.; Santos, P. V.; Ramsteiner, M.; Comedi, D.; Pudenzi, M. A. A.; Chambouleyron, I.
| | | | · Boron doping of hydrogenated amorphous silicon prepared by rf-co-sputtering Lima Jr., M.M. de; Freire Jr., F.L.; Marques, F.C.
| | | | · Structural and chemical properties of ZnSe-Fe electrodeposited granular films Moraes, A.R. de; Mosca, D.H.; Schreiner, W.H.; Mattoso, N.; Silveira, E.
| | | | · Many particle theory for the luminescence, characterization and simulation of quantum well laser structures Pereira Jr., M.F.; Bernussi, A. A.; Carvalho Jr., W.; Furtado, Mario T.; Gobbi, A. L.
| | | | · Ionizing radiation and hot carrier effects in SiC MOS devices Vasconcelos, E. A. de; Silva Jr., E. F. da; Katsube, T.; Yoshida, S.
| | | | · First-principles study of the adsorption of PH3 on Ge(001) and Si(001) surfaces Miotto, R.; Ferraz, A. C.; Srivastava, G.P.
| | | | · Adsorption of Si and C atoms over SiC (111) surfaces Vivas, P. G.; Silva, E. E. da; Carvalho, L. C. de; Alves, J. L. A.; Alves, H. W. Leite; Scolfaro, L. M. R.; Leite, J. R.
| | | | · On the morphology of films grown by droplet-assisted molecular beam epitaxy Lamas, T. E.; Quivy, A. A.
| | | | · Hole transport characteristics in pure and doped GaSb Messias, L.G.O.; Marega Jr., E.
| | | | · First-principles calculations of the effective mass parameters of AlxGa1-xN and ZnxCd1-xTe alloys Paiva, R. de; Nogueira, R. A.; Oliveira, C. de; Alves, H. W. Leite; Alves, J. L. A.; Scolfaro, L. M. R.; Leite, J. R.
| | | | · Magnetic properties of gadolinium-doped amorphous silicon films Sercheli, M.S.; Rettori, C.; Zanatta, A.R.
| | | | · Nonlinear dynamics time series analysis of chaotic current oscillations in a semi-insulating GaAs sample Silva, R.L. da; Rubinger, R.M.; Oliveira, A.G. de; Ribeiro, G.M.
| | | | · Bare LO-phonon peak in THz-emission signals: a dielectric-function analysis Souza, Fabrício M.; Egues, J. C.
| | | | · Structure and bonding of iron-acceptor pairs in silicon Zhao, S.; Justo, J. F.; Assali, L. V. C.; Kimerling, L. C.
| | | | · A silicon-polymer heterostructure for sensor applications Laranjeira, J. M. G.; Khoury, H. J.; Azevedo, W. M. de; Vasconcelos, E. A. de; Silva Jr., E. F. da
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