Silicon carbide (SiC) ceramics were developed by liquid phase sintering using AlN-Y2O3 as additive. Two compositions were obtained using different AlN-Y2O3 contents. The powders were mixed/homogenized and subsequently deagglomerated. Powder mixtures were compacted by cold isostatic pressing and sintered at 2080 ºC for 1h under 0.2 MPa-N2 atmosphere. Sintered samples were characterized by X-ray diffraction and relative density. The oxidation behavior was investigated and related to the additive content. Samples were submitted to the tests at 1200, 1300 and 1400 ºC in air for 120 h. Weight gain of the samples was plotted as a function of the exposure time, obtaining the evolution of the oxidation on the sample surfaces. The oxidized surfaces of samples were characterized by X-ray diffraction. The parabolic growing coefficient of the oxidation layer (k p) were determined. The results indicate that the samples show parabolic behavior in all conditions. Samples with larger AlN content in relation to Y2O3 show larger oxidation resistance at 1200 ºC; however, with the increase of the temperature to 1400 ºC, the samples with smaller AlN content in relation to Y2O3 show larger oxidation resistance. This fact is related with the intergranular phases present in the system after sintering.
silicon carbide; liquid phase sintering; oxidation
