Ceramics of SBN, undoped and doped with rare earth oxides, were prepared to the study of the influence of the doping on the dielectric properties. The samples were characterised through dielectric measurements as a function of temperature (30 K to 500 K) and frequency (1 kHz to 1 MHz). In all samples two distinct dielectric relaxation processes were observed. The first one at temperatures below 100 K; the second one is near room temperature, where the dielectric constant is maximum. The doping causes distinct effects in the maximum temperatures of the dielectric constants in the two dielectric relaxation regions.
Phase transition; dielectric properties; ceramics
