SrBi2Ta2O9 thin films were deposited on Pt/Ti/SiO2/Si substrates and, for the first time, sintered in a domestic microwave oven. The X-ray diffraction patterns showed that the films are polycrystalline. The microwave processing allows to use a low temperature for the synthesis, obtaining films with good electrical properties. Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) results reveal good adherence between film and substrate and a surface microstructure presenting thin and spherical grains and roughness of 4.7 nm. The dielectric constant and the dissipation factor, for a frequency of 100 KHz at room temperature, were 77 and 0.04, respectively. The remaining polarization (2Pr) and the coercive field (Ec) were 1.04 C/cm² and 33 kV/cm, respectively. The behavior of the drift current density reveals three electric conduction mechanisms: linear, ohmic and another mechanism that can be attributed to the Schottky current. From the XRD patterns, analyses of the SEM images and AFM surface topography it was noticed that 10 min of thermal treatment at 550 ºC, in a microwave oven, is enough time to obtain the crystallization of the films.
thin films; SBT; ferroelectrics; crystallization; microwave
