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Silicon improves ornamental pot sunflower production and quality

The aim of this research was to evaluate the effect of splitting different Si rates in the production of ornamental pot sunflowers, grown under greenhouse. The Si source was potassium silicate, applied at the substrate. The treatments were arranged in a 5x2 factorial experiment, with five Si rates (0, 150, 300, 450 and 600mg pot-1) and two forms of application (whole or split) in a complete randomized design, with four repetitions. Each repetition is a 5 inch potted F1 hybrid Sunflower Pollenless Sunbright. The inflorescence diameter, plant height, stem diameter, roots dry matter , leaves, inflorescence and the Si content in each plant part were measured. There was no significant interaction of Si rates and its splitting for any evaluated characteristic. The plant height increased with the Si splitting. The flowers and roots dry matter and the flower diameter and shape enhanced with the implementation of Si. The content of Si also increased with the applied Si rates, supporting that the sunflower uptake and accumulates Si in their tissues.

potassium silicate; nutrition; fertilization; Helianthus annuus


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